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openings
More Information
Review of applications will begin immediately and will continue until the positions are filled. Interested applicants should send an email to wjliu@fudan.edu.cn
Project Assistant
Requirements:
- CET4>450
- Highly self-motivated, holding a Bachelor degree at least.
- Coordinating the project team and/or financial reimbursement partly Review of applications will begin immediately and will continue until the positions are filled. Interested applicants should send an email to wjliu@fudan.edu.cn
Postdoctor positions for a two-year contract @ Fudan University Handan Campus
Research Field:
Amper level gallium oxide power device and its application
Requirements:
- CET6>450
- Background in PhD training of gallium oxide power device or related research field is much more preferred.
PhD and Master Positions are in 2025 Spring Semester
Research Fields
- Gallium oxide based power devices and circuits
- Novel ferroelectric devices and process, reliability
- Circuit design, reliability verification and application, collaborate with company
portfolio
Portfolio item number 2
Short description of portfolio item number 2 
publications
Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Published in Applied Physics Letters, 2018
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Recommended citation: Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, "Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy." Applied Physics Letters, 2018.
Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition
Published in Nanophotonics, 2020
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Recommended citation: Yifan Xiao, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Zhang, "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics, 2020.
Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer
Published in Applied Surface Science, 2020
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Recommended citation: Yifan Xiao, Wenjun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, "Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer." Applied Surface Science, 2020.
High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing
Published in IEEE Transactions on Electron Devices, 2021
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Recommended citation: Tiantian Pi, Dongqi Xiao, Hui Yang, Gang He, Xiaohan Wu, Wenjun Liu, David Zhang, Shi-Jin Ding, "High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing." IEEE Transactions on Electron Devices, 2021.
Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics
Published in IEEE Transactions on Electron Devices, 2021
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Recommended citation: Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.
Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current
Published in Applied Surface Science, 2022
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Recommended citation: Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye, "Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current." Applied Surface Science, 2022.
Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure
Published in Nano Research, 2022
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Recommended citation: Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Qiu-Jun Yu, Meng-Yang Liu, Li-Yuan Zhu, Wenjun Liu, Ying-Guo Yang, David Zhang, Hong-Liang Lu, "Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure." Nano Research, 2022.
Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics
Published in Materials Today Physics, 2022
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Recommended citation: Yiming Zhang, Bowen Hou, Yu Wu, Ying Chen, Yujie Xia, Haodong Mei, Mingran Kong, Lei Peng, Hezhu Shao, Jiang Cao, "Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics." Materials Today Physics, 2022.
Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity
Published in IEEE Electron Device Letters, 2023
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Recommended citation: Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.
Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage
Published in Electronics, 2023
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Recommended citation: Hao He, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, Wenjun Liu, "Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage." Electronics, 2023.
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination
Published in Nanomaterials, 2024
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Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.
Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing
Published in Chip, 2024
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Recommended citation: Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu, "Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing." Chip, 2024.
Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation
Published in IEEE Electron Device Letters, 2024
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Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Yu-Chun Li, Xin-Long Zhou, Kang-Li Xu, Yu-Chang Chen, Gen-Ran Xie, Hao Zhang, Lin Chen, Shi-Jin Ding, "Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation." IEEE Electron Device Letters, 2024.
Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process
Published in ACS Applied Electronic Materials, 2024
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Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lu, Lin Chen, Shi-Jin Ding, Wen-Jun Liu, "Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process." ACS Applied Electronic Materials, 2024.
High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer
Published in In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024
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Recommended citation: Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.
High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility
Published in Nanotechnology, 2024
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Recommended citation: Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wen-Jun Liu, "High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility." Nanotechnology, 2024.
Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Published in SCIENCE CHINA Information Sciences, 2025
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Recommended citation: Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.
Over 1.2 GW/cm2 β-Ga2O3 SBD with Vbr of 1.93 kV realized by O2 plasma and annealing
Published in Semiconductor Science and Technology, 2025
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Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu, "Over 1.2 GW/cm2 $beta$-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing." Semiconductor Science and Technology, 2025.
talks
Talk 1 on Relevant Topic in Your Field
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Conference Proceeding talk 3 on Relevant Topic in Your Field
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This is a description of your conference proceedings talk, note the different field in type. You can put anything in this field.
teaching
Device Reliability principle and characterization
Undergraduate course, Fudan University, School of Microelectronics, 2024
Device Reliability principle and characterization
Integrated Circuit Reliability and Its Applications
Master Course, Fudan University, School of Microelectronics, 2024
Integrated Circuit Reliability and Its Applications
Semiconductor Device Characterizations
Master Course, Fudan University, School of Microelectronics, 2024
Semiconductor Device Characterizations