A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination
Published in Nanomaterials, 2024
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Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.