2.4 kV β-Ga2O3 SBDs with 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment
Published in IEEE Electron Device Letters, 2025
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Recommended citation: Yongjie He, Maolin Pan, Jining Yang, Wenjun Liu, Hao Zhu, "2.4 kV β-Ga2O3 SBDs with 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment." IEEE Electron Device Letters, 2025.