High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer
Published in In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024
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Recommended citation: Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.