Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity
Published in IEEE Electron Device Letters, 2023
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Recommended citation: Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.