Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics
Published in IEEE Transactions on Electron Devices, 2021
Use Google Scholar for full citation
Recommended citation: Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.