Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer
Published in SCIENCE CHINA Information Sciences, 2025
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Recommended citation: Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.