Published in National Science Review, 2026
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Recommended citation: Yinchi Liu, Kangli Xu, Shuqi Tang, Handong Zhu, Lin Chen, Shiyou Chen, Wenjun Liu, and Peng Zhou, "Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping." National Science Review, 2026.
Published in IEEE Transactions on Electron Devices, 2026
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Recommended citation: Hao Zhang, Yinchi Liu, Jining Yang, Yeye Guo, Yiwen Yu, Yongjie He, Hao Zhu, Wenjun Liu, "A NiO/$beta$-Ga 2 O 3 Heterojunction Diode With Ultralow Turn-On Voltage via O 2 Plasma Treatment." IEEE Transactions on Electron Devices, 2026.
Published in Advanced Science, 2025
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Recommended citation: Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, "Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory." Advanced Science, 2025.
Published in Semiconductor Science and Technology, 2025
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Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu, "Over 1.2 GW/cm2 $beta$-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing." Semiconductor Science and Technology, 2025.
Published in Applied Physics Letters, 2025
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Recommended citation: Yinchi Liu, Handong Zhu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Yanxi Li, Lin Chen, Shijin Ding, "Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation." Applied Physics Letters, 2025.
Published in SCIENCE CHINA Information Sciences, 2025
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Recommended citation: Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.
Published in IEEE Electron Device Letters, 2025
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Recommended citation: Yongjie He, Maolin Pan, Jining Yang, Wenjun Liu, Hao Zhu, "2.4 kV β-Ga2O3 SBDs with 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment." IEEE Electron Device Letters, 2025.
Published in Nanotechnology, 2024
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Recommended citation: Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wen-Jun Liu, "High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility." Nanotechnology, 2024.
Published in In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024
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Recommended citation: Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.
Published in ACS Applied Electronic Materials, 2024
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Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lu, Lin Chen, Shi-Jin Ding, Wen-Jun Liu, "Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process." ACS Applied Electronic Materials, 2024.
Published in IEEE Electron Device Letters, 2024
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Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Yu-Chun Li, Xin-Long Zhou, Kang-Li Xu, Yu-Chang Chen, Gen-Ran Xie, Hao Zhang, Lin Chen, Shi-Jin Ding, "Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation." IEEE Electron Device Letters, 2024.
Published in Chip, 2024
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Recommended citation: Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu, "Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing." Chip, 2024.
Published in Nanomaterials, 2024
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Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.
Published in Electronics, 2023
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Recommended citation: Hao He, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, Wenjun Liu, "Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage." Electronics, 2023.
Published in IEEE Electron Device Letters, 2023
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Recommended citation: Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.
Published in Materials Today Physics, 2022
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Recommended citation: Yiming Zhang, Bowen Hou, Yu Wu, Ying Chen, Yujie Xia, Haodong Mei, Mingran Kong, Lei Peng, Hezhu Shao, Jiang Cao, "Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics." Materials Today Physics, 2022.
Published in Nano Research, 2022
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Recommended citation: Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Qiu-Jun Yu, Meng-Yang Liu, Li-Yuan Zhu, Wenjun Liu, Ying-Guo Yang, David Zhang, Hong-Liang Lu, "Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure." Nano Research, 2022.
Published in Applied Surface Science, 2022
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Recommended citation: Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye, "Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current." Applied Surface Science, 2022.
Published in IEEE Transactions on Electron Devices, 2021
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Recommended citation: Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.
Published in IEEE Transactions on Electron Devices, 2021
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Recommended citation: Tiantian Pi, Dongqi Xiao, Hui Yang, Gang He, Xiaohan Wu, Wenjun Liu, David Zhang, Shi-Jin Ding, "High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing." IEEE Transactions on Electron Devices, 2021.
Published in Applied Surface Science, 2020
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Recommended citation: Yifan Xiao, Wenjun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, "Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer." Applied Surface Science, 2020.
Published in Nanophotonics, 2020
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Recommended citation: Yifan Xiao, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Zhang, "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics, 2020.
Published in Applied Physics Letters, 2018
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Recommended citation: Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, "Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy." Applied Physics Letters, 2018.