Published in Advanced Science, 2025
Use Google Scholar for full citation
Recommended citation: Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, "Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory." Advanced Science, 2025.
Published in Semiconductor Science and Technology, 2025
Use Google Scholar for full citation
Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu, "Over 1.2 GW/cm2 $beta$-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing." Semiconductor Science and Technology, 2025.
Published in Applied Physics Letters, 2025
Use Google Scholar for full citation
Recommended citation: Yinchi Liu, Handong Zhu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Yanxi Li, Lin Chen, Shijin Ding, "Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation." Applied Physics Letters, 2025.
Published in SCIENCE CHINA Information Sciences, 2025
Use Google Scholar for full citation
Recommended citation: Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.
Published in IEEE Electron Device Letters, 2025
Use Google Scholar for full citation
Recommended citation: Yongjie He, Maolin Pan, Jining Yang, Wenjun Liu, Hao Zhu, "2.4 kV β-Ga2O3 SBDs with 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment." IEEE Electron Device Letters, 2025.
Published in Nanotechnology, 2024
Use Google Scholar for full citation
Recommended citation: Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wen-Jun Liu, "High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility." Nanotechnology, 2024.
Published in In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024
Use Google Scholar for full citation
Recommended citation: Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.
Published in ACS Applied Electronic Materials, 2024
Use Google Scholar for full citation
Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lu, Lin Chen, Shi-Jin Ding, Wen-Jun Liu, "Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process." ACS Applied Electronic Materials, 2024.
Published in IEEE Electron Device Letters, 2024
Use Google Scholar for full citation
Recommended citation: Yin-Chi Liu, Ji-Ning Yang, Yu-Chun Li, Xin-Long Zhou, Kang-Li Xu, Yu-Chang Chen, Gen-Ran Xie, Hao Zhang, Lin Chen, Shi-Jin Ding, "Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation." IEEE Electron Device Letters, 2024.
Published in Chip, 2024
Use Google Scholar for full citation
Recommended citation: Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu, "Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing." Chip, 2024.
Published in Nanomaterials, 2024
Use Google Scholar for full citation
Recommended citation: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.
Published in Electronics, 2023
Use Google Scholar for full citation
Recommended citation: Hao He, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, Wenjun Liu, "Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage." Electronics, 2023.
Published in IEEE Electron Device Letters, 2023
Use Google Scholar for full citation
Recommended citation: Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.
Published in Materials Today Physics, 2022
Use Google Scholar for full citation
Recommended citation: Yiming Zhang, Bowen Hou, Yu Wu, Ying Chen, Yujie Xia, Haodong Mei, Mingran Kong, Lei Peng, Hezhu Shao, Jiang Cao, "Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics." Materials Today Physics, 2022.
Published in Nano Research, 2022
Use Google Scholar for full citation
Recommended citation: Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Qiu-Jun Yu, Meng-Yang Liu, Li-Yuan Zhu, Wenjun Liu, Ying-Guo Yang, David Zhang, Hong-Liang Lu, "Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure." Nano Research, 2022.
Published in Applied Surface Science, 2022
Use Google Scholar for full citation
Recommended citation: Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye, "Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current." Applied Surface Science, 2022.
Published in IEEE Transactions on Electron Devices, 2021
Use Google Scholar for full citation
Recommended citation: Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.
Published in IEEE Transactions on Electron Devices, 2021
Use Google Scholar for full citation
Recommended citation: Tiantian Pi, Dongqi Xiao, Hui Yang, Gang He, Xiaohan Wu, Wenjun Liu, David Zhang, Shi-Jin Ding, "High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing." IEEE Transactions on Electron Devices, 2021.
Published in Applied Surface Science, 2020
Use Google Scholar for full citation
Recommended citation: Yifan Xiao, Wenjun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, "Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer." Applied Surface Science, 2020.
Published in Nanophotonics, 2020
Use Google Scholar for full citation
Recommended citation: Yifan Xiao, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Zhang, "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics, 2020.
Published in Applied Physics Letters, 2018
Use Google Scholar for full citation
Recommended citation: Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, "Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy." Applied Physics Letters, 2018.