CV

Education

Ph.D in Version Control Theory, GitHub University, 2018 (expected)
M.S. in Jekyll, GitHub University, 2014
B.S. in GitHub, GitHub University, 2012

Work experience

Spring 2024: Academic Pages Collaborator
- Github University
- Duties includes: Updates and improvements to template
- Supervisor: The Users
Fall 2015: Research Assistant
- Github University
- Duties included: Merging pull requests
- Supervisor: Professor Hub
Summer 2015: Research Assistant
- Github University
- Duties included: Tagging issues
- Supervisor: Professor Git

Skills

Skill 1
Skill 2
- Sub-skill 2.1
- Sub-skill 2.2
- Sub-skill 2.3
Skill 3

Publications

Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping

Yinchi Liu, Kangli Xu, Shuqi Tang, Handong Zhu, Lin Chen, Shiyou Chen, Wenjun Liu, and Peng Zhou, "Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping." National Science Review, 2026.

A NiO/$beta$-Ga 2 O 3 Heterojunction Diode With Ultralow Turn-On Voltage via O 2 Plasma Treatment

Hao Zhang, Yinchi Liu, Jining Yang, Yeye Guo, Yiwen Yu, Yongjie He, Hao Zhu, Wenjun Liu, "A NiO/$beta$-Ga 2 O 3 Heterojunction Diode With Ultralow Turn-On Voltage via O 2 Plasma Treatment." IEEE Transactions on Electron Devices, 2026.

Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory

Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, "Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory." Advanced Science, 2025.

Over 1.2 GW/cm2 β-Ga2O3 SBD with V_br of 1.93 kV realized by O2 plasma and annealing

Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu, "Over 1.2 GW/cm2 $beta$-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing." Semiconductor Science and Technology, 2025.

Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation

Yinchi Liu, Handong Zhu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Yanxi Li, Lin Chen, Shijin Ding, "Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation." Applied Physics Letters, 2025.

Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.

2.4 kV β-Ga₂O₃ SBDs with 1.22 GW/cm² Figure of Merit by N₂O Plasma Treatment

Yongjie He, Maolin Pan, Jining Yang, Wenjun Liu, Hao Zhu, "2.4 kV β-Ga₂O₃ SBDs with 1.22 GW/cm² Figure of Merit by N₂O Plasma Treatment." IEEE Electron Device Letters, 2025.

High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wen-Jun Liu, "High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility." Nanotechnology, 2024.

High Performance FeFET with α-IGZO Channel Enabled by Atomic-Layer-Deposited HfO2 Interfacial Layer

Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.

Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process

Yin-Chi Liu, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lu, Lin Chen, Shi-Jin Ding, Wen-Jun Liu, "Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process." ACS Applied Electronic Materials, 2024.

Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation

Yin-Chi Liu, Ji-Ning Yang, Yu-Chun Li, Xin-Long Zhou, Kang-Li Xu, Yu-Chang Chen, Gen-Ran Xie, Hao Zhang, Lin Chen, Shi-Jin Ding, "Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation." IEEE Electron Device Letters, 2024.

Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing

Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu, "Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing." Chip, 2024.

A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.

Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage

Hao He, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, Wenjun Liu, "Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage." Electronics, 2023.

Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.

Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics

Yiming Zhang, Bowen Hou, Yu Wu, Ying Chen, Yujie Xia, Haodong Mei, Mingran Kong, Lei Peng, Hezhu Shao, Jiang Cao, "Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics." Materials Today Physics, 2022.

Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure

Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Qiu-Jun Yu, Meng-Yang Liu, Li-Yuan Zhu, Wenjun Liu, Ying-Guo Yang, David Zhang, Hong-Liang Lu, "Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure." Nano Research, 2022.

Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye, "Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current." Applied Surface Science, 2022.

Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics

Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.

High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing

Tiantian Pi, Dongqi Xiao, Hui Yang, Gang He, Xiaohan Wu, Wenjun Liu, David Zhang, Shi-Jin Ding, "High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing." IEEE Transactions on Electron Devices, 2021.

Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Yifan Xiao, Wenjun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, "Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer." Applied Surface Science, 2020.

Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition

Yifan Xiao, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Zhang, "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics, 2020.

Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, "Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy." Applied Physics Letters, 2018.

Service and leadership

Currently signed in to 43 different slack teams

Wenjun Liu (刘文军)

CV