Yinchi Liu, Jiajia Tao, Xiaoyu Dou, Kangli Xu, Yuchun Li, Handong Zhu, Hongliang Lu, Yanxi Li, Chi Liu, Jiezhi Chen, "Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory." Advanced Science, 2025.
Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu, "Over 1.2 GW/cm2 $beta$-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing." Semiconductor Science and Technology, 2025.
Yinchi Liu, Handong Zhu, Xun Lu, Shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Yanxi Li, Lin Chen, Shijin Ding, "Enhanced polarization switching and reliability in BEOL-compatible HZO/ZrO2/HZO stack under low-voltage operation." Applied Physics Letters, 2025.
Yinchi Liu, Xun Lu, shiyu Li, Hao Zhang, Jining Yang, Yeye Guo, Dmitriy GOLOSOV, Chenjie Gu, Hongliang Lu, Zhigang Ji, Shijin Ding, Wenjun Liu, "Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer." SCIENCE CHINA Information Sciences, 2025.
Yongjie He, Maolin Pan, Jining Yang, Wenjun Liu, Hao Zhu, "2.4 kV β-Ga2O3 SBDs with 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment." IEEE Electron Device Letters, 2025.
Yin-Chi Liu, Gen-Ran Xie, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Bao Zhu, Xiaohan Wu, Hong-Liang Lu, Shi-Jin Ding, Wen-Jun Liu, "High performance and nearly wake-up free Hf0.5Zr0.5O2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility." Nanotechnology, 2024.
Yinchi Liu, Hao Zhang, Xinlong Zhou, Dmitriy Golosov, Chenjie Gu, Hongliang Lu, Shijin Ding, Wenjun Liu, "High Performance FeFET with $alpha$-IGZO Channel Enabled by Atomic-Layer-Deposited HfO 2 Interfacial Layer." In the proceedings of 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2024.
Yin-Chi Liu, Ji-Ning Yang, Hao Zhang, Dmitriy Golosov, Chenjie Gu, Xiaohan Wu, Hong-Liang Lu, Lin Chen, Shi-Jin Ding, Wen-Jun Liu, "Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zro.5O2/ZrO2/ Hfo.5Zro.5O2 Stack Film Compatible with BEOL Process." ACS Applied Electronic Materials, 2024.
Yin-Chi Liu, Ji-Ning Yang, Yu-Chun Li, Xin-Long Zhou, Kang-Li Xu, Yu-Chang Chen, Gen-Ran Xie, Hao Zhang, Lin Chen, Shi-Jin Ding, "Back-End of Line Compatible Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Achieving 2Pr of 39.6 μC/cm2 and Endurance Exceeding 1010 Cycles under Low-Voltage Operation." IEEE Electron Device Letters, 2024.
Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu, "Back-End-of-Line Compatible Hf0. 5Zr0. 5O2 Ferroelectric Devices Enabled by Microwave Annealing." Chip, 2024.
Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu, "A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination." Nanomaterials, 2024.
Hao He, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, Wenjun Liu, "Large-scale $beta$-Ga2O3 trench MOS-type schottky barrier diodes with 1.02 ideality factor and 0.72 V turn-on voltage." Electronics, 2023.
Yin-Chi Liu, Yu-Chun Li, Ze-Yu Gu, Xin-Long Zhou, Teng Huang, Ze-Hui Li, Tian-Tian Pi, Yan-Fei Li, Shi-Jin Ding, Lin Chen, "Back End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity." IEEE Electron Device Letters, 2023.
Yiming Zhang, Bowen Hou, Yu Wu, Ying Chen, Yujie Xia, Haodong Mei, Mingran Kong, Lei Peng, Hezhu Shao, Jiang Cao, "Towards high-temperature electron-hole condensate phases in monolayer tetrels metal halides: Ultra-long excitonic lifetimes, phase diagram and exciton dynamics." Materials Today Physics, 2022.
Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Qiu-Jun Yu, Meng-Yang Liu, Li-Yuan Zhu, Wenjun Liu, Ying-Guo Yang, David Zhang, Hong-Liang Lu, "Highly Sensitive and Stable ꞵ-Ga2O3 DUV Phototransistor with local back-gate structure." Nano Research, 2022.
Yifan Xiao, Xiaoxi Li, Hehe Gong, Wenjun Liu, Xiaohan Wu, Shijin Ding, Hongliang Lu, Jiandong Ye, "Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current." Applied Surface Science, 2022.
Wenjun Liu, Gang He, Die Wang, Hai Yu, Qian Gao, Yanmei Liu, Zebo Fang, "Interface chemistry evolution and leakage current conduction mechanism determination in rare-Earth-doped Hf-based gate dielectrics." IEEE Transactions on Electron Devices, 2021.
Tiantian Pi, Dongqi Xiao, Hui Yang, Gang He, Xiaohan Wu, Wenjun Liu, David Zhang, Shi-Jin Ding, "High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing." IEEE Transactions on Electron Devices, 2021.
Yifan Xiao, Wenjun Liu, Chaochao Liu, Hongyu Yu, Huan Liu, Jun Han, Weiguo Liu, Wenfeng Zhang, Xiaohan Wu, Shijin Ding, "Large area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer." Applied Surface Science, 2020.
Yifan Xiao, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Zhang, "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics, 2020.
Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, "Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy." Applied Physics Letters, 2018.
Conference proceedings talk at Testing Institute of America 2014 Annual Conference, Los Angeles, CA
Talk at London School of Testing, London, UK
Tutorial at UC-Berkeley Institute for Testing Science, Berkeley CA, USA
Talk at UC San Francisco, Department of Testing, San Francisco, California